This laboratory was started in April 2006 to conduct research on both advanced CMOS and post-CMOS devices. The lab has expertise in computational nanoelectronics. The lab focuses on understanding the behavior of emerging nanoelectronic devices through analytical modeling and numerical simulation. The activities focuses on wide range of devices, which includes multi-gate MOSFET, tunnel field effect transistors, single electron transistors and Carbon nanotube transistors. The lab is also involved in compact model development in order to use these novel devices for large-scale circuit simulation. The activities are well funded by several national and international agencies like DST, CSIR, IFCPAR and ISRO.